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| FDW254PZ March 2003 FDW254PZ P-Channel 1.8V Specified PowerTrench(R) MOSFET General Description This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V - 8V). Features * -9.2 A, -20 V. RDS(ON) = 12 m @ VGS = -4.5 V RDS(ON) = 15 m @ VGS = -2.5 V RDS(ON) = 21.5 m @ VGS = -1.8 V Applications * Load switch * Motor drive * DC/DC conversion * Power management * Rds ratings for use with 1.8 V logic * ESD protection diode * Low gate charge * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package D S S D G S S D 5 6 7 8 4 3 2 1 TSSOP-8 Pin 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings -20 8 (Note 1) Units V V A W C -9.2 -50 1.4 1 -55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 96 208 C/W Package Marking and Ordering Information Device Marking 254PZ Device FDW254PZ Reel Size 13'' Tape width 12mm Quantity 3000 units (c)2003 Fairchild Semiconductor Corporation FDW254PZ Rev C (W) FDW254PZ Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = -250 A Min -20 Typ Max Units V Off Characteristics ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 8 V, VGS = 0 V VDS = 0 V ID = -250 A -11 -1 10 mV/C A A On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, -0.4 -0.6 2 9 11 14 12 -1.5 V mV/C ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -9.2 A VGS = -2.5 V, ID = -7.9 A VGS = -1.8 V, ID = -6.5 A VGS=-4.5 V, ID =-9.2 A, TJ=125C VGS = -4.5 V, VDS = -5 V, VDS = -5 V ID = -9.2 A -50 12 15 21.5 18 m ID(on) gFS On-State Drain Current Forward Transconductance A 54 S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = -10 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V, 5880 990 560 pF pF pF f = 1.0 MHz 4.9 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, VGS = -4.5 V, ID = -1 A, RGEN = 6 15 15 210 100 27 27 336 160 96 ns ns ns ns nC nC nC VDS = -10 V, VGS = -4.5 V ID = -9.2 A, 60 7 13 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -1.2 A (Note 2) -1.2 -0.5 35 21 -1.2 A V ns nC IF = -9.2 A, diF/dt = 100 A/s Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) b) RJA is 96C/W (steady state) when mounted on a 1 inch2 copper pad on FR-4. RJA is 208C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < s, Duty cycle < 2.0%. FDW254PZ Rev. C (W) FDW254PZ Typical Characteristics 60 VGS = -4.5V 50 -ID, DRAIN CURRENT (A) 2.8 -2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 VGS = - 1.8V -3.5V 40 30 -3.0V -2.0V -2.0V 20 -1.8V -2.5V -3.0V -3.5V -4.5V 10 0 0 0.5 1 1.5 2 2.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 10 20 30 40 50 60 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.035 RDS(ON), ON-RESISTANCE (OHM) 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = -9.2A VGS = - 4.5V ID = -4.6A 0.03 0.025 TA = 125oC 0.02 0.015 TA = 25oC 0.01 0.005 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 60 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 TA = -55oC o 50 -ID, DRAIN CURRENT (A) 40 30 20 10 0 0.5 1 1.5 2 25oC 125 C -IS, REVERSE DRAIN CURRENT (A) VDS = -5V VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 2.5 0 0.2 0.4 0.6 0.8 1 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW254PZ Rev. C (W) FDW254PZ Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) 8000 ID = -9.2A 4 VDS = -5V -15V -10V CAPACITANCE (pF) 7000 6000 5000 4000 3000 2000 1000 CISS f = 1 MHz VGS = 0 V 3 2 1 COSS CRSS 0 0 10 20 30 40 50 60 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 100s -ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 1ms 10ms 100ms 1s 1 10s DC P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 50 SINGLE PULSE RJA = 114C/W TA = 25C 40 30 20 0.1 VGS = -4.5V SINGLE PULSE RJA = 114oC/W TA = 25oC 10 0.01 0.01 0.1 1 10 100 0 0.01 0.1 1 10 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 114 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW254PZ Rev. C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2 |
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